| No. | Partie # | Fabricant | Description | Fiche Technique |
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ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for |
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ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for |
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ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for |
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