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F20N60 |
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| Part Number | F20N60 |
| Manufacturer | ROUM |
| Description | These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The packag... |
| Features |
● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of adaptor and charger. TO-220C TO-220F TO-3PN 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)... |
| Document |
 F20N60 Data Sheet
PDF 1.13MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F20NM50FD |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
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| 2 | F20NM60D |
STMicroelectronics |
STF20NM60D |
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| 3 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 4 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 5 | F2003 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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