| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiG |
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RFMD |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe |
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|
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiG |
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