No. | Partie # | Fabricant | Description | Fiche Technique |
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Power Innovations Limited |
NPN SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS ese values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCB |
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Power Innovations Limited |
PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
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Power Innovations Limited |
NPN SILICON POWER TRANSISTORS pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VAL |
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Power Innovations Limited |
NPN SILICON POWER TRANSISTORS pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VAL |
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Power Innovations Limited |
NPN SILICON POWER TRANSISTORS pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VAL |
|
|
|
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VAL |
|
|
|
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS pply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VAL |
|
|
|
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS ese values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCB |
|
|
|
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS ese values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCB |
|
|
|
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
|
|
|
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
|
|
|
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
|
|
|
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
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|
|
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
|
|
|
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. |
|
|
|
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS ese values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCB |
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