Potens semiconductor PJD fiche technique

No.	Partie #	Fabricant	Description
1	PJD04N70L	Potens semiconductor	N-Channel MOSFETS  4A,700V, RDS(ON) =0.93Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  LED Lighting  Adapter/charger Absolute Maximum Ratings (Tc=
2	PJD11N60D	Potens semiconductor	N-Channel MOSFETS  11A,600V, RDS(ON) =0.38Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  LED Lighting  Adapter/charger Absolute Maximum Ratings (Tc
3	PJD04N60D	Potens semiconductor	N-Channel MOSFETS
4	PJD11N65D	Potens semiconductor	N-Channel MOSFETS  11A,650V, RDS(ON) =0.38Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  LED Lighting  Adapter/charger Absolute Maximum Ratings (Tc