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PJD11N65D |
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| Part Number | PJD11N65D |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe... |
| Features |
11A,650V, RDS(ON) =0.38Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications High efficient switched mode power supplies LED Lighting Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Curre... |
| Document |
 PJD11N65D Data Sheet
PDF 723.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PJD11N60D |
Potens semiconductor |
N-Channel MOSFETS |
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| 2 | PJD10P10A |
Pan Jit International |
100V P-Channel Enhancement Mode MOSFET |
|
| 3 | PJD14P06-AU |
Pan Jit International |
60V P-Channel Enhancement Mode MOSFET |
|
| 4 | PJD14P06A |
Pan Jit International |
60V P-Channel Enhancement Mode MOSFET |
|
| 5 | PJD14P06A-AU |
PAN JIT |
6V P-Channel MOSFET |
|