| No. | Partie # | Fabricant | Description | Fiche Technique |
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Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to C |
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Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH G |
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