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LX803 |
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| Part Number | LX803 |
| Manufacturer | Polyfet RF Devices |
| Description | LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Pagi... |
| Features |
low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
-65 o C to 150o C
6 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP
45WATTS OU... |
| Document |
 LX803 Data Sheet
PDF 53.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LX802 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
| 2 | LX803DE |
Littelfuse |
0.8Amp Sensitive Triacs |
|
| 3 | LX803DT |
Littelfuse |
0.8Amp Sensitive Triacs |
|
| 4 | LX803ME |
Littelfuse |
0.8Amp Sensitive Triacs |
|
| 5 | LX803MT |
Littelfuse |
0.8Amp Sensitive Triacs |
|