| No. | Partie # | Fabricant | Description | Fiche Technique |
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Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1410 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AT HIGH EFFICIEN |
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Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1415 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150 Watts Single Ended Package Style AM HIGH EFFICIEN |
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Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F142 |
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Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1401 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35 Watts Single Ended Package Style AP HIGH EFFICIENC |
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Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature F14 |
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