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F1401 |
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| Part Number | F1401 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1401
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance 3.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V
o
-65 o C to 150o C
2 A
RF CHARACTERI... |
| Document |
 F1401 Data Sheet
PDF 42.70KB |
| Distributor | Stock | Price | Buy |
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