| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Philips |
NPN microwave power transistors • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Mu |
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|
Philips |
NPN microwave power transistor • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Mu |
|