MZ0912B100Y Philips NPN microwave power transistors Datasheet, en stock, prix

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MZ0912B100Y

Philips
MZ0912B100Y
MZ0912B100Y MZ0912B100Y
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Part Number MZ0912B100Y
Manufacturer Philips
Description NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ091...
Features
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and low thermal resistance
• Input and output matching cell allows an easier design of circuits. APPLICATIONS
• Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a S...

Document Datasheet MZ0912B100Y Data Sheet
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