No. | Partie # | Fabricant | Description | Fiche Technique |
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Philips |
UHF power LDMOS transistor • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 90 W (PEP) – Gain = 12 dB – Efficiency = 32% – dim = −26 dBc • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • De |
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Philips |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2.0 GHz) • Internal input and output matching for high gain and ef |
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Philips |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). PINNING - SOT467C PIN DESCRIPTION 1 drain 2 gate 3 s |
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Philips |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS |
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