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Philips BLF DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BLF1820-90

Philips
UHF power LDMOS transistor

• Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:
  – Output power = 90 W (PEP)
  – Gain = 12 dB
  – Efficiency = 32%
  – dim = −26 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• De
Datasheet
2
BLF2047L-90

Philips
UHF power LDMOS transistor

• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (1.8 to 2.0 GHz)
• Internal input and output matching for high gain and ef
Datasheet
3
BLF2043F

Philips
UHF power LDMOS transistor

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (HF to 2.2 GHz). PINNING - SOT467C PIN DESCRIPTION 1 drain 2 gate 3 s
Datasheet
4
BLF1820-40

Philips
UHF power LDMOS transistor

• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (1.8 to 2 GHz)
• Internal input and output matching for high gain and efficiency
• Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS
Datasheet



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