| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
2SD2375 q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 6 3 1 25 2 150 –55 to +150 Unit V V V A |
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Panasonic Semiconductor |
2SD2374 q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 6 5 |
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Panasonic Semiconductor |
2SD2374 q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 6 5 |
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Panasonic Semiconductor |
Silicon PNP Transistor 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0 –0.2 +0.1 0.4±0.08 0.5±0. |
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Panasonic Semiconductor |
2SD2359 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0 –0.2 +0.1 0.4±0.08 0.5±0. |
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Panasonic Semiconductor |
Silicon NPN Transistor q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCB |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Paramete |
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Panasonic Semiconductor |
Silicon NPN Transistor 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0 –0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tap |
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Panasonic Semiconductor |
Silicon NPN Transistor • Low collector to emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Paramet |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 6 5 |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q Unit: mm 15.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 25 2 150 –55 to +150 Unit V φ3.2±0.1 |
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Panasonic Semiconductor |
Silicon NPN Transistor q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 6 3 1 25 2 150 –55 to +150 Unit V V V A |
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