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D2359 |
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| Part Number | D2359 |
| Manufacturer | Panasonic Semiconductor |
| Description | www.DataSheet.co.kr Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q q Low collector to emitter ... |
| Features |
2.6±0.1
0.4max.
q q
Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
45°
1.0 –0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0 –0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3 2 1 (Ta=25˚C) Ratings 20 20 5 1.2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ... |
| Document |
 D2359 Data Sheet
PDF 88.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D235 |
SavantIC |
2SD235 |
|
| 2 | D2353 |
Toshiba Semiconductor |
2SD2353 |
|
| 3 | D2300 |
Agere Systems |
1.3 mm D2300-Type Laser Isolated DFB Laser Module |
|
| 4 | D2300 |
Micro Electronics |
1.3 m D2300-Type Laser Isolated DFB Laser Module |
|
| 5 | D2304G |
Agere Systems |
1.3 mm D2300-Type Laser Isolated DFB Laser Module |
|