No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
2SB1434 • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
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Panasonic Semiconductor |
Silicon PNP Transistor • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to ba |
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Panasonic Semiconductor |
2SB1417 q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Darlington q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Para |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings |
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Panasonic Semiconductor |
Silicon PNP Transistor • Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ A |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collec |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Ab |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q 0.4 0.8±0.1 0.4 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –150 –150 |
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Panasonic Semiconductor |
Silicon PNP triple diffusion planer type Transistor q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25˚C) Ratings –400 –400 –7 –1 – 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.65 max. 1.0 1.0 0 |
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Panasonic Semiconductor |
Silicon PNP Transistor • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to ba |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Darlington q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0 – |
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