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Panasonic Semiconductor |
2SB1321A • Large collector power dissipation P C (600 mW) • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base volta |
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Panasonic Semiconductor |
2SB1320 Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
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Panasonic Semiconductor |
Power Transistors Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
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Panasonic Semiconductor |
2SB1393 q Satisfactory linearity of foward current transfer ratio hFE q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol |
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Panasonic Semiconductor |
Silicon PNP Transistor 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto |
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Panasonic Semiconductor |
Silicon PNP Transistor • High forward current transfer ratio hFE • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Coll |
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Panasonic Semiconductor |
Silicon PNP Transistor • High forward current transfer ratio hFE • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Coll |
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Panasonic Semiconductor |
Silicon PNP Transistor 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto |
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Panasonic Semiconductor |
Power Transistors Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
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Panasonic Semiconductor |
Silicon PNP Transistor • Large collector power dissipation PC (600 mW) • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltag |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings –160 –160 –5 –20 |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1393 2SB1393A 2SB1393 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 25 2.0 150 –55 to +150 Uni |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings –180 –180 –5 –25 |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 1.5 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCE |
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Panasonic Semiconductor |
Silicon PNP Transistor • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector curr |
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Panasonic Semiconductor |
Silicon PNP Transistor 0.15 0.7 4.0 0.8 Unit nA µA V V V –25 –20 –7 90 25 – 0.4 –1.2 350 V V MHz VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 25 pF Pulse measurement FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 180 ~ 350 Rank hFE1 1 Tr |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1393 2SB1393A 2SB1393 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 25 2.0 150 –55 to +150 Uni |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor Unit nA nA V V V MHz pF Pulse measurement *1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 Rank hFE 1 Transistor PC — Ta 1.6 –6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector porti |
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Panasonic Semiconductor |
Reflective Photosensor • Small size, light weight: 5 mm × 4.5 mm (height: 4.0 mm) • Focal distance: 2.5 mm • Visible light cutoff resin is used ■ Applications • Copier • Facsimiles • Printers • Cassette deck ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating |
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Panasonic Semiconductor |
Reflective Photosensor Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) Easy interface for control circuit Applications Control of motor and other rotary units Detection of position and edge |
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