Panasonic Semiconductor 2SA fiche technique

No.	Partie #	Fabricant	Description
1	A1512	Panasonic Semiconductor	2SA1512 q Low collector to emitter saturation voltage VCE(sat). q Optimum for low-voltage operation and for converters. q Allowing supply with the radial taping. q Optimum for high-density mounting. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector
2	2SA1096A	Panasonic Semiconductor	Silicon NPN Transistor • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to b
3	2SA746	Panasonic Semiconductor	PNP Transistor
4	2SA900	Panasonic Semiconductor	Silicon PNP Transistor
5	2SA0684	Panasonic Semiconductor	Silicon PNP Transistor • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V
6	2SA0886	Panasonic Semiconductor	Silicon PNP Transistor 11.0±0.5 1 2SA0886 PC  Ta 1.6 –4.0 –3.5 IC  VCE TC=25˚C IB= –40mA –35mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC/IB=10 –10 Collector power dissipation PC (W) Collector current IC (A) 1.2 –3.0 –2.5 –30mA –25mA –20
7	2SA1123	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-dri
8	2SA2021	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min.
9	AN8472SA	Panasonic Semiconductor	Spindle motor driver • 3-phase full-wave 120° duty factor system • Low power consumption due to a direct PWM system • D-MOS transistor with low ON resistance (0.6 Ω typ.) on the output stage • With start and stop pins • Thermal shut-down function built-in • With FG outpu
10	2SA2101	Panasonic Semiconductor	Silicon PNP epitaxial planar type Transistor • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guarantee
11	2SA684	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage
12	2SA720	Panasonic Semiconductor	Silicon PNP Transistor q Complementary pair with 2SC1317 and 2SC1318. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA719 2SA720 2SA719 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1 –500 625 150 –55 ~ +150
13	2SA720A	Panasonic Semiconductor	Silicon PNP Transistor q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE
14	2SA777	Panasonic Semiconductor	Silicon NPN Transistor 0.45 –0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitte
15	2SA879	Panasonic Semiconductor	Silicon NPN triple diffusion planer type Transistor 0.45 –0.1 1.27 +0.2 ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector ou
16	2SA1034	Panasonic Semiconductor	Silicon NPN epitaxial planer type Transistor q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit 1.1 –0.1 +0.2 2 emitter voltage 2SA1035 Emitter to bas
17	2SA1535	Panasonic Semiconductor	Silicon PNP Transistor q q q 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amp
18	2SA1806	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
19	2SA2009	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor • High collector to emitter voltage VCEO • Low noise voltage NV 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltag
20	2SA2010	Panasonic Semiconductor	Silicon PNP epitaxial planer type Transistor • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary pair with 2SC5592 1 0.40+0.10 –0.05 3 0.16+0.10