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Panasonic |
Silicon planar type • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 1 W • Wide voltage range: VZ = 5.1 V to 56.0 V • Easy-to-use because of the finely divided zener voltage ranks, such as A and B ranks φ |
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Panasonic |
Silicon epitaxial planar type variable resistor Series Unit : mm φ 0.56 max. 1 Silicon epitaxial planar type variable resistor For temperature and reduced voltage compensation • High reliability achieved through combination of a planar type chip and glass sealing structure • Easy mounting becaus |
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Panasonic |
Silicon planar type • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 1 W • Wide voltage range: VZ = 5.1 V to 56.0 V • Easy-to-use because of the finely divided zener voltage ranks, such as A and B ranks φ |
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Panasonic |
Schottky Barrier Diodes (SBD) 1 MA2H735 IF V F 1 Schottky Barrier Diodes (SBD) IR V R 10 Ta = 125°C 1 75°C 25°C − 20°C Ct VR 300 Ta = 25°C 75°C 10−1 Terminal capacitance Ct (pF) Ta = 125°C 10−1 250 Reverse current IR (mA) Forward current IF (A) 200 10−2 150 10 |
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Panasonic |
Silicon planar type • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 1 W • Wide voltage range: VZ = 5.1 V to 56.0 V • Easy-to-use because of the finely divided zener voltage ranks, such as A and B ranks φ |
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Panasonic |
Silicon planar type trigger device φ 1.95 max. 24 min. Storage temperature Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation DO-35 Package Marking Symbol: MA2B064 I Electrical Characteristics Ta = 25°C Parameter Breakov |
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Panasonic |
Silicon epitaxial planar type Switching Diodes COLORED BAND INDICATES CATHODE 1 1 MA2C178, MA2C179 Switching Diodes Common characteristics charts IF V F 103 Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse 102 trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω For |
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Panasonic |
Schottky Barrier Diodes • Allowing to rectify under (IF(AV) = 200 mA) condition • Sealed in DO-34 (DHD) package • Allowing high-density mounting (5 mm pitch insertion) • High reliability φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 0.2 max. I Absolute Maximum R |
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Panasonic |
Schottky Barrier Diodes (SBD) • IF(AV) = 1 A rectification is possible • Half New Mini-power package 3.2±0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * Jun |
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Panasonic |
Schottky Barrier Diodes (SBD) 1 MA2HD09 IF V F 10 1 10−1 Ta = 125°C Schottky Barrier Diodes (SBD) IR V R Ta = 125°C 10−2 Forward current IF (A) 10−2 10−3 10−4 10−5 10−6 25°C 75°C Reverse current IR (A) 10−1 75°C 10−3 25°C 10−4 10−5 0 0.1 0.2 0.3 0.4 0.5 0.6 |
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Panasonic |
Switching Diodes • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA • High breakdown voltage (VR = 80 V) 0.5 ± 0.1 2 0.16 − 0.06 + 0.1 1 Parameter Reverse voltage (DC) Peak reverse voltage Fo |
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Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type • IF(AV) = 200 mA rectification is possible. • Small reverse current: IR < 5 µA (at VR = 30 V) 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse |
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Panasonic |
Silicon epitaxial planar type • • • • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 ± 0.05 Unit : mm 2 1 0.60 0.60 0.12 − 0.02 + 0.05 I Abso |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Basic Part Number Dual DSA2G01 (Individual) Packaging DMA506E10R Embossed type (Thermo-compression sealin |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor Package Code Mini5-G3-B Pin Name 1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Basic Part Number Dual DRA2123Y (Common emitter |
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Panasonic |
Silicon planar type • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 1 W • Wide voltage range: VZ = 5.1 V to 56.0 V • Easy-to-use because of the finely divided zener voltage ranks, such as A and B ranks φ |
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Panasonic |
Schottky Barrier Diodes (SBD) • Forward current IF(AV) = 1.5 A rectification is possible • Low forward voltage VF 1 0 to 0.1 2.6±0.1 3.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) *1 2 Symbol VR |
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Panasonic |
Silicon epitaxial planar type variable resistor • Mini type package • Extremely small reverse current IR • High reliability with planar structure • Wide forward voltage VF range 0.65 ± 0.15 1.5 − 0.05 + 0.25 0.95 2.9 − 0.05 1.9 ± 0.2 + 0.2 1 3 2 0.95 1.45 1.1 − 0.1 Parameter Reverse vo |
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Panasonic |
Silicon epitaxial planar type • Short reverse recovery time trr • Small terminal capacitance, Ct COLORED BAND INDICATES CATHODE φ 0.56 max. 1 24 min. Unit : mm I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage MA2B150 (DC) MA2B161 MA2B162 MA2B162A Repetitive peak M |
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Panasonic |
Silicon epitaxial planar type variable resistor Series Unit : mm φ 0.56 max. 1 Silicon epitaxial planar type variable resistor For temperature and reduced voltage compensation • High reliability achieved through combination of a planar type chip and glass sealing structure • Easy mounting becaus |
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