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Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic |
2SC5407 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic |
Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic Semiconductor |
Lower limit for operation guarantee 4, 1/16, 1/32, 1/64 of OSC oscillation clock frequency; 1/1 of XI oscillation clock frequency; external clock input Interrupt source · · · · · · · · · · · · · · · · coincidence with compare register 0 Timer counter 1 : 8-bit × 1 (square-wave output, event count, sy |
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Panasonic Semiconductor |
2SC5440 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) 5˚ (4.0) |
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Panasonic |
Silicon NPN Transistor 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE |
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Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic Semiconductor |
NPN TRANSISTOR φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) 5˚ (4.0) |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. SS-Mini type package, allowing downsizing of the equip |
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Panasonic Semiconductor |
2SC5418 φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum |
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Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Panasonic Semiconductor |
NPN TRANSISTOR φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
NPN Transistor 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE |
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Panasonic Semiconductor |
NPN TRANSISTOR • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape |
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Panasonic |
2SC5423 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSheet4U.com 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector cu |
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Panasonic |
Silicon NPN Transistor • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.65 max. (1.0) 14.5±0.5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage |
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Panasonic |
NPN Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage |
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Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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