No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Panasonic |
2SB1592 q Low collector to emitter saturation voltage VCE(sat). q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage V |
|
|
|
Panasonic |
2SB1531 q q q 10.5±0.5 4.0±0.1 2.0±0.1 Parameter Symbol VCBO VCEO VEBO ICP IC Ratings –130 –110 –5 Unit V V V A A 12.5 s Absolute Maximum Ratings Collector to base voltage (TC=25˚C) Collector to emitter voltage Emitter to base voltage Peak collect |
|
|
|
Panasonic Semiconductor |
2SB1503 q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
|
|
|
Panasonic Semiconductor |
2SB1548 15.0±0.5 • High forward current transfer ratio hFE which has satisfactory φ 3.2±0.1 linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw / I Absolute Maximum |
|
|
|
Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Rating |
|
|
|
Panasonic |
Silicon PNP epitaxial planar type darlington en) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) V |
|
|
|
Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
|
|
|
Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
|
|
|
Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
|
|
|
Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
|
|
|
Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
|
|
|
Panasonic |
Carbon Composition Trimmer Potentiometers ● Top-adjust or side-adjust available ● Radial taping supported ● High reliability (dustproof construction) ■ Recommended Applications ● Audio Visual Equipment, Home Electrical Appliances ■ Explanation of Part Numbers 1234 EVND 5 6 7 8 9 10 11 12 |
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor q q q Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings |
|
|
|
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q 4.5±0.1 1.6±0.2 1.5±0.1 1.0 –0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor q q q Unit: mm 15.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 25 2 150 –55 to +150 Unit V φ3.2±0.1 |
|
|
|
Panasonic |
(ECKDNxxxxx) Ceramic Disc Capacitors |
|
|
|
Panasonic |
Choke Coils 0.650 0.740 0.950 1.080 1.220 1.590 1.760 2.490 2.760 3.240 4.560 5.180 6.080 8.800 9.470 10.900 12.300 4.0±1.2 f 0.65 3.0±0.5 ELC06D150E ELC06D180E ELC06D220E ELC06D270E ELC06D330E ELC06D390E ELC06D470E ELC06D560E Recommended PWB piercing plan |
|
|
|
Panasonic |
Choke Coils 0.650 0.740 0.950 1.080 1.220 1.590 1.760 2.490 2.760 3.240 4.560 5.180 6.080 8.800 9.470 10.900 12.300 4.0±1.2 f 0.65 3.0±0.5 ELC06D150E ELC06D180E ELC06D220E ELC06D270E ELC06D330E ELC06D390E ELC06D470E ELC06D560E Recommended PWB piercing plan |
|
|
|
Panasonic |
Choke Coils 0.650 0.740 0.950 1.080 1.220 1.590 1.760 2.490 2.760 3.240 4.560 5.180 6.080 8.800 9.470 10.900 12.300 4.0±1.2 f 0.65 3.0±0.5 ELC06D150E ELC06D180E ELC06D220E ELC06D270E ELC06D330E ELC06D390E ELC06D470E ELC06D560E Recommended PWB piercing plan |
|