| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
2SK3637 (23.4) 1 2SK3637 ■ Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = |
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Panasonic Semiconductor |
Silicon N-Channel Junction FET q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.1 |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q |
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Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
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Panasonic |
2SK3665 |
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Panasonic |
2SK2324 q Avalanche Unit : mm 4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2 energy capability guaranteed switching q High-speed q Low q No ON-resistance 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 secondary breakdown s Applications q Non-contact q Solenoid q Motor |
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Panasonic Semiconductor |
2SK664 q High-speed switching q S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. 2.0±0.2 1.3±0.1 0.65 0.65 unit: mm 0.425 2.1±0.1 1.25±0.1 0.425 0.3 –+00.1 1 3 2 0.9±0.1 0.7±0.1 0.2 s |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 q C |
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Panasonic Semiconductor |
N-Channel MOSFET q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 Drain to Sour |
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Panasonic Semiconductor |
N-Channel MOSFET q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0. |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain c |
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Panasonic Semiconductor |
2SK3192 • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) 21.0±0.5 φ 3.2±0.1 15.0±0.2 ■ Applications • PDP • Switching mode regulator 16.2±0.5 (3.2) (2.3) So |
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Panasonic Semiconductor |
2SK2538 q Avalanche energy capability guaranteed q High-speed switching q No secondary breakdown s Applications q High-speed switching (switching mode regulator) q For high-frequency power amplification s Absolute Maximum Ratings (Tc = 25˚C) Parameter Dra |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET V mS pF pF pF 1 Silicon Junction FETs (Small Signal) PD Ta 150 240 Ta=25˚C 125 200 200 VGS=0.4V 2SK2380 ID VDS 240 VDS=10V ID VGS Allowable power dissipation PD (mW) Drain current ID (µA) 100 160 Drain current ID (µA) 160 75 120 0 |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET q Avalanche Unit : mm 0.7±0.1 energy capability guaranteed switching 16.7±0.3 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 q High-speed q No secondary breakdown 7.5±0.2 ø3.1±0.1 s Applications q High-speed q For switching (switching mode regulat |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 q C |
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Panasonic Semiconductor |
N-Channel MOSFET q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL 13.5±0.5 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable p |
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Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
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