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K2324 |
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| Part Number | K2324 |
| Manufacturer | Panasonic |
| Description | Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2 energy capability guaranteed switching q High-speed q Low... |
| Features |
q Avalanche Unit : mm
4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2
energy capability guaranteed switching
q High-speed q Low q No
ON-resistance
15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2
secondary breakdown
s Applications
q Non-contact q Solenoid q Motor
relay
13.7 -0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
drive
drive equipment mode regulator
7˚
q Control
q Switching
1 2 3
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC= 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating... |
| Document |
 K2324 Data Sheet
PDF 138.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2325TJ600 |
IXYS |
Medium Voltage Thyristor |
|
| 2 | K2325TJ650 |
IXYS |
Medium Voltage Thyristor |
|
| 3 | K2312 |
Toshiba Semiconductor |
2SK2312 |
|
| 4 | K2313 |
Toshiba Semiconductor |
2SK2313 |
|
| 5 | K2313 |
Toshiba Semiconductor |
2SK2313 |
|