PINGWEI 2N6 fiche technique

No.	Partie #	Fabricant	Description
1	2N60F	PINGWEI	N-Channel MOSFET  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃
2	2N60BS	PINGWEI	N-Channel Super Junction Power MOSFET  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ra
3	2N60B	PINGWEI	N-Channel MOSFET  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃
4	2N60GS	PINGWEI	N-Channel Super Junction Power MOSFET  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ra
5	2N60HS	PINGWEI	N-Channel Super Junction Power MOSFET  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ra
6	2N60S	PINGWEI	N-Channel Super Junction Power MOSFET  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ra
7	2N60D	PINGWEI	N-Channel MOSFET  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃
8	2N65S	PINGWEI	650Volts N-Channel Super Junction Power MOSFET  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N65S ITO-220AB 2N65FS TO-262 2N65HS TO-263 2N65BS TO-252 2N65GS TO-251 2N65DS Absolute Maximum Ra
9	2N60DS	PINGWEI	N-Channel Super Junction Power MOSFET  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ra
10	2N60	PINGWEI	N-Channel MOSFET  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃
11	2N65DS	PINGWEI	650Volts N-Channel Super Junction Power MOSFET  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N65S ITO-220AB 2N65FS TO-262 2N65HS TO-263 2N65BS TO-252 2N65GS TO-251 2N65DS Absolute Maximum Ra
12	2N65FS	PINGWEI	650Volts N-Channel Super Junction Power MOSFET  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N65S ITO-220AB 2N65FS TO-262 2N65HS TO-263 2N65BS TO-252 2N65GS TO-251 2N65DS Absolute Maximum Ra
13	2N60FS	PINGWEI	N-Channel Super Junction Power MOSFET  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60S ITO-220AB 2N60FS TO-262 2N60HS TO-263 2N60BS TO-252 2N60GS TO-251 2N60DS Absolute Maximum Ra
14	2N60G	PINGWEI	N-Channel MOSFET  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃
15	2N60H	PINGWEI	N-Channel MOSFET  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃
16	2N65GS	PINGWEI	650Volts N-Channel Super Junction Power MOSFET  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N65S ITO-220AB 2N65FS TO-262 2N65HS TO-263 2N65BS TO-252 2N65GS TO-251 2N65DS Absolute Maximum Ra
17	2N65HS	PINGWEI	650Volts N-Channel Super Junction Power MOSFET  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N65S ITO-220AB 2N65FS TO-262 2N65HS TO-263 2N65BS TO-252 2N65GS TO-251 2N65DS Absolute Maximum Ra
18	2N65BS	PINGWEI	650Volts N-Channel Super Junction Power MOSFET  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N65S ITO-220AB 2N65FS TO-262 2N65HS TO-263 2N65BS TO-252 2N65GS TO-251 2N65DS Absolute Maximum Ra