| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Mitsubishi Electric Semiconductor |
2SC1972 |
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Toshiba Semiconductor |
2SC1923 A (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ. Max Unit |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC= 100mA ; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10mA ICBO Emitter Cutoff Current VCB= 60V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE(1) DC Current Gain IC= 2mA ; VCE= 6V hFE(2) DC Curren |
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Inchange Semiconductor |
Silicon NPN Power Transistors S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 V |
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Hitachi Semiconductor |
2SC1906 0 — —V IC = 3 mA, RBE = ∞ — —V IE = 10 µA, IC = 0 — — 1000 1.0 0.2 0.5 — — 2.0 1.0 µA MHz pF V VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA 10 25 ps VCB = 10 V, IC = 10 |
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Inchange Semiconductor |
Silicon NPN Power Transistor NGE Semiconductor 2SC1970 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO |
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Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
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Toshiba Semiconductor |
Silicon NPN Transistor |
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Mitsubishi Electric Semiconductor |
2SC1946A |
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ON Semiconductor |
NPN Epitaxial Silicon Transistor • Audio Frequency Amplifier and High−Frequency OSC • Complement to KSA1015 • Collector−Base Voltage: VCBO = 50 V • This is a Pb−Free Device MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collec |
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Hitachi Semiconductor |
Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE* |
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Hitachi Semiconductor |
Silicon NPN Transistor ctor to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg 60 10 V V V pF MHz µS µS µS VCE = 3 V, |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor , IE=0, f=1MHz VCE=6V, IC=0.1mA RS=10kΩ, f=1Hz 80 2.0 1.0 3.0 1.0 70 25 0.1 Min. Typ. Max. 0.1 0.1 700 0.25 1.0 V V MHz pF dB Units µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 L 350 ~ 700 ©2002 Fairchild Semicon |
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ON Semiconductor |
N-Channel MOSFET • 1200 V @ TJ = 175°C • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Industrial Motor Drive • UPS • Boost Inverter • PV C |
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Panasonic Semiconductor |
2SC1473 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage 2SC1473 VCBO 250 V c type (Emitter ope |
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NXP Semiconductors |
16 mode or 68 mode bus interface are available. The SC16C852L UART provides enhanced UART functions with 128-byte FIFOs, modem control interface, DMA mode data transfer, and IrDA encoder/decoder. The DMA mode data transfer is controlled by the FIFO trigger levels and the TXRDY and R |
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Inchange Semiconductor |
2SC1827 or-base breakdown voltage IC=0.1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A ICBO Collector cut-off current VC |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on secon |
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Panasonic Semiconductor |
Silicon NPN Transistor 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collecto |
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