2SC1061 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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2SC1061

Inchange Semiconductor
2SC1061
2SC1061 2SC1061
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Part Number 2SC1061
Manufacturer Inchange Semiconductor
Description ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 ·Minimum Lot-to-Lot variations for robust device performance and...
Features S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V ICBO Collector Cutoff Current VCB= 20V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 4V hFE-2 DC Current Gain IC= 1A ; VCE= 4V
 hFE-2 Classifications A B C D 35-70 60-120 100-...

Document Datasheet 2SC1061 Data Sheet
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