| No. | Partie # | Fabricant | Description | Fiche Technique |
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NationalSemiconductor |
Quad High Speed Differential Line Driver TRI-STATE ® outputs and logically ANDed complementary outputs. The inputs are all LS compatible and are all one unit load. Features n n n n n n n n n n Output skew — 2.0 ns typical Input to output delay — 10 ns typical Operation from single 5V suppl |
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Micrel Semiconductor |
OA/OAI GATE DESCRIPTION s Max. propagation delay of 800ps s IEE min. of –55mA s Extended supply voltage option: VEE = –4.2V to –5.5V s Voltage and temperature compensation for improved noise immunity s Internal 75kΩ input pull-down resistors s 70% faster than |
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Taiwan Semiconductor |
200mW High Voltage SMD Switching Diode - Fast switching device (trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are |
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Fairchild Semiconductor |
Triple Video D/A Converters • • • • • • • • • • 10-bit resolution 150 megapixels per second ± 0.1% linearity error Sync and blank controls 1.0V p-p video into 37.5Ω or 75Ω load Internal bandgap voltage reference Double-buffered data for low distortion TTL-compatible inputs Low |
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QP Semiconductor |
Quad High Speed Differential Line Driver of the AMD devices were duplicated; the devices are “plug and play” compatible. The circuit design and wafer fab process selected duplicates the electrical characteristics of the original devices, including parasitic performance. “Failsafe” character |
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Fortune Semiconductor |
One Cell Lithium-ion/Polymer Battery Protection IC |
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Fairchild Semiconductor |
High Voltage General Purpose Diode TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAS31 350 2.8 357 Units mW mW/ °C °C/W ©1997 Fairchild Semiconductor Corporation BAS31 High Voltage General P |
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ON Semiconductor |
Low Voltage SPDT Mux / Demux Analog Switch • High Speed: tPD = 0.25 ns (Max) @ VCC = 4.5 V • RON: 8.5 W Typ @ VCC = 4.2 V • CON: 7.5 pF Typ @ VCC = 3.3 V • VCC Range: 1.65 V to 4.5 V • Ultra−Small 1 x 1 mm Package • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Typical Appl |
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China Semiconductor |
Numeric / Alphanumeric Display |
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Hitachi Semiconductor |
Quadruple Differential Line Drivers quadruple differential line drivers which satisfy the requirements of EIA standard RS-422A. This device is designed to provide differential signals with high current capability on bus lines. The circuit provides enable input to control all four drive |
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Micrel Semiconductor |
Quint Differential Line Receiver DESCRIPTION ■ Max. propagation delay of 900ps ■ Differential outputs ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ VBB output for single-ended |
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ON Semiconductor |
Trench Power MOSFET • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) • Gate Diodes for ESD Protection • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme |
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Fortune Semiconductor |
Lithium-ion/Polymer Battery Protection Low supply current Normal Operation : 3.0μA typ. @VDD=3.9V Power-down mode : 0.3μA max. @VDD=2.0V Overcharge detection voltage ﹝VOCU﹞ 4.0V~4.4V, Accuracy of ±25mV Overcharge release voltage ﹝VOCR﹞ 3.9V~4.2V Accuracy of ±50mV Overdischarge det |
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ON Semiconductor |
Power MOSFET • Leading Edge Trench Technology for Low On Resistance • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP−6 Package • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu |
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National Semiconductor |
Quad High Speed Differential Line Driver TRI-STATE ® outputs and logically ANDed complementary outputs. The inputs are all LS compatible and are all one unit load. Features n n n n n n n n n n Output skew — 2.0 ns typical Input to output delay — 10 ns typical Operation from single 5V suppl |
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Fairchild Semiconductor |
3.0 Ampere Schottky Barrier Rectifiers • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low-Forward Voltage Drop • Easy Pick and Place • High-Surge Current Capability Description The SS32-S310 series includes a high-efficiency, low power loss, general-propose Schottky rectifi |
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ON Semiconductor |
Schottky Rectifier • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low−Forward Voltage Drop • Easy Pick and Place • High−Surge Current Capability • This Device is Pb−Free and Halide Free DATA SHEET www.onsemi.com 1 Cathode 2 Anode SMC CASE 403AG MARKI |
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Panasonic Semiconductor |
Switching Diodes • Two elements are contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance Ct 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0 to 0.01 Parameter Reverse volta |
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ON Semiconductor |
Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS(on) Solution in 2x2 mm Package 1.5 V RDS(on) Rating f |
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