| No. | Partie # | Fabricant | Description | Fiche Technique |
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NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook |
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Silan Semiconductors |
LOW POWER 8-BIT MCU 1.8V~3.6V operating voltage range, low display current in IDLE mode, and ultra-low Stop current, which makes it well suitable for the battery-powered systems. APPLICATION Air conditioner remote control Medical and healthcare equipments Panel d |
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Toshiba Semiconductor |
Photocoupler 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1993-05 2019-06-17 Current Transfer Ratio Classification (Note 1) Current Transfer Ratio (%) (IC/IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking Of Classifi |
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Alliance Semiconductor |
Low-Power Mobile VGA EMI Reduction IC FCC approved method of EMI attenuation. Generates a low EMI spread spectrum clock of the input frequency. Optimized for frequency range from: o o P1817A – 20 to 30MHz. Operation P1817B – 10 to 20MHz Operation P1817A/B down stream clock and data dep |
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Silan Semiconductors |
LOW POWER 8-BIT MCU 1.8V~3.6V operating voltage range, low display current in IDLE mode, and ultra-low Stop current, which makes it well suitable for the battery-powered systems. APPLICATION Air conditioner remote control Medical and healthcare equipments Panel d |
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NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) RDS(ON) <120mΩ @ VGS=-10V (Typ:95mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schemati |
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Toshiba Semiconductor |
Photocoupler |
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ON Semiconductor |
2.5A Fully Integrated Li-Ion Switching Battery Charger under software supervision. An optional battery FET can be placed between the system and the battery in order to isolate and supply the system. The NCP1854 junction temperature is monitored during charge cycle and both current and voltage can be modi |
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uPI Semiconductor |
Three-Channel Current Console The uP1816P is a high precision current console consisting of three sets I2C programmable current DACs. Each current DAC is capable of sinking 128-step and sourcing 128-step output currents that are programmed by the I2C interface. The sinking and s |
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uPI Semiconductor |
Three-Channel Current Console soft-jump, easily interfacing with standard DC/DC converter for current console. The uP1816Q is available in the space-saving WDFN2x2 - 8L package. Features SMBus 2.0 Compatible Interface Provide 3 Sets of Current DACs 5% Accuracy SMBus Prog |
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ON Semiconductor |
Fully Integrated Li-Ion Switching Battery Charger under software supervision. An optional battery FET can be placed between the system and the battery in order to isolate and supply the system. The NCP1852 junction temperature and battery temperature are monitored during charge cycle, and both curre |
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Alliance Semiconductor |
(P1818 - P1822) Low Power Mobile VGA EMI Reduction IC • • • • FCC approved method of EMI attenuation Provides up to 15 dB EMI reduction Generates a low EMI spread spectrum clock and a non-spread reference clock of the input frequency Optimized for frequency range from 10 MHz to 160 MHz P1818: 10 to 20 M |
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Alliance Semiconductor |
(P1818 - P1822) Low Power Mobile VGA EMI Reduction IC • • • • FCC approved method of EMI attenuation Provides up to 15 dB EMI reduction Generates a low EMI spread spectrum clock and a non-spread reference clock of the input frequency Optimized for frequency range from 10 MHz to 160 MHz P1818: 10 to 20 M |
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Alliance Semiconductor Corporation |
(ASM8x184x) Voltage Mode PWM Controller 30V maximum operating voltage with CMOS technology Adjustable PWM frequencies (40 KHz to 400 KHz) Maximum Output drive current of 1A. Wide duty cycle range (0% minimum to 95% maximum) Spread spectrum modulation with adjustable spread. Under voltage l |
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ON Semiconductor |
Integrated Li-Ion Charger • Integrated Voltage and Current Regulation • No External MOSFET, Sense Resistor or Blocking Diode Required • Charge Current Thermal Foldback • Integrated Pre−charge Current for Conditioning a Deeply Discharged Battery • Integrated End−of−Charge (EOC |
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ON Semiconductor |
Power MOSFET 1 A, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) EAS 61 mJ RqJC RqJA TL °C/W 3.1 72.5 260 °C Maximum ratings are those values beyon |
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ON Semiconductor |
Fully Integrated Li-Ion Switching Battery Charger under software supervision. An optional battery FET can be placed between the system and the battery in order to isolate and supply the system. The NCP1850 junction temperature and battery temperature are monitored during charge cycle, and both curre |
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ON Semiconductor |
Low Dropout Voltage Regulator such as Thermal Shutdown, Soft Start, Current Limiting and also Power Good Output signal for easy MCU interfacing. Features • Operating Input Voltage Range: 1.5 V to 5.5 V • Adjustable and Fixed Voltage Options Available: 0.8 V to 5.2 V • Low Quiesce |
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Silan Semiconductors |
LOW POWER 8-BIT MCU 1.8V~3.6V operating voltage range, low display current in IDLE mode, and ultra-low Stop current, which makes it well suitable for the battery-powered systems. APPLICATION Air conditioner remote control Medical and healthcare equipments Panel d |
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NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low on-Resistance Schematic diagram Application ●Power manag |
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