| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Short Circuit Rated IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-powe |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF08N60Z |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDD U |
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ON Semiconductor |
N-Channel Power MOSFET • On-resistance RDS(on)=8Ω(typ.) • Input Capacitance Ciss=650pF(typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Cu |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Using advanced NPT IGBT technology, Fairchild’s the |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control September 2013 General Description Using advanced NPT IGBT technology, |
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ON Semiconductor |
Single N-Channel TO-220FP MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit |
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ON Semiconductor |
N-Channel Power MOSFET • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to− |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDD Un |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF06N62Z |
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ON Semiconductor |
MOSFET on and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reli |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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National Semiconductor |
N-Channel Monolithic Cascode Dual JFET DS -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 2 |
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