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ON Semiconductor |
Power MOSFET • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhib |
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TriQuint Semiconductor |
10 Watt MMDS Packaged Amplifier • • • • • • • • TGA2923-SG 3.5 GHz Application Frequency Range 9 dB Nominal Gain 10 Watt Nominal Psat 2.5% EVM at 30 dBm output power IMD3 -45 dBc @ 28 dBm SCL, Typical Bias Conditions: 8 V @ 1.2 A (Quiescent) 0.5 µm HFET Technology 2 lead Cu-alloy |
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Zetex Semiconductors |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR 0.15 0.10 2.50 Inches Min 0.105 0.047 0.0145 0.0033 0.0004 0.0825 Max 0.120 0.055 0.043 0.021 0.0059 0.004 0.0985 1 3 2 B C D F G K L N NOM 1.9 NOM 0.075 NOM 0.95 NOM 0.37 Package Details Zetex plc. Fields New Road, Chadderton, Oldham, OL9 |
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ON Semiconductor |
Power MOSFET • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhib |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOSt devices are designed for use in low voltag |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOSt devices are designed for use in low voltag |
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ON Semiconductor |
Switching Diode |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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ON Semiconductor |
High-Speed Switching Diode • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 CATHODE 2 ANODE 2 THERMAL CHARACTERISTICS Charact |
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ON Semiconductor |
Power MOSFET • Power MOSFET with Low VF • Lower Component Placement and Inventory Costs along with Board Space Savings • Logic Level Gate Drive — Can be Driven by Logic ICs • Mounting Information for SO−8 Package Provided • Applications Information Provided • R2 |
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TriQuint Semiconductor |
10 Watt MMDS Packaged Amplifier • • • • • • • • • TGA2924-SG 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched IMD3 -45 dBc @ 28 dBm SCL, Typical Bias Conditions: 8 V @ 1.2 A (Quiescent) 0.5 µm |
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ON Semiconductor |
Schottky Barrier Diode , 2001 1 January, 2000 – Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet http://www.datasheet4u.com/ MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode C |
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ON Semiconductor |
Power MOSFET • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhib |
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ON Semiconductor |
Power MOSFET • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • IDSS Specif |
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ON Semiconductor |
Power MOSFET • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Ex |
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ON Semiconductor |
Power MOSFET low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, h |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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ON Semiconductor |
Power MOSFET nt − Continuous @ TA = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) Source Current − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VGS ID IDM IS PD 30 Vdc ± 20 Vdc 4.0 Adc 20 Apk 1.7 Adc 2.0 Watts Operating and Storage |
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ON Semiconductor |
Dual P-Channel Field Effect Transistors . • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications • Characterized Over a Wide Range of Power Ratings • Logic Level Gate Drive − Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Cir |
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ON Semiconductor |
Power MOSFET nt − Continuous @ TA = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) Source Current − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VGS ID IDM IS PD 30 Vdc ± 20 Vdc 4.0 Adc 20 Apk 1.7 Adc 2.0 Watts Operating and Storage |
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