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ON Semiconductor MMB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MMBZ5258ELT1G

ON Semiconductor
Zener Voltage Regulators

• 225 mW Rating on FR−4 or FR−5 Board
• Zener Voltage Range − 2.4 V to 91 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power
Datasheet
2
SMMBD301LT3G

ON Semiconductor
Silicon Hot-Carrier Diodes

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
Datasheet
3
MMBD7000LT1G

ON Semiconductor
Dual Switching Diode

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (EA
Datasheet
4
SMMBT2907AL

ON Semiconductor
PNP Silicon Transistors

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Val
Datasheet
5
SMMBT4401L

ON Semiconductor
Switching Transistor

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −
Datasheet
6
HD6340

Hitachi Semiconductor
PTM(Programmble Timer Module)
Datasheet
7
MMBD4148CC

Fairchild Semiconductor
Small Signal Diode
Datasheet
8
MMBD330T1G

ON Semiconductor
Schottky Barrier Diodes

 Extremely Low Minority Carrier Lifetime
 Very Low Capacitance
 Low Reverse Leakage
 Available in 8 mm Tape and Reel
 AEC Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir
Datasheet
9
MMBD101LT1G

ON Semiconductor
Schottky Barrier Diodes

 Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
 Very Low Capacitance − Less Than 1.0 pF
 High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltag
Datasheet
10
MMBZ27VALT1G

ON Semiconductor
Zener Diode

• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
• Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform
• ES
Datasheet
11
HD68B40

Hitachi Semiconductor
PTM(Programmble Timer Module)
Datasheet
12
MMBD4148

Fairchild Semiconductor
Small Signal Diode
Datasheet
13
SMMBD770T1G

ON Semiconductor
Schottky Barrier Diodes

 Extremely Low Minority Carrier Lifetime
 Very Low Capacitance
 Low Reverse Leakage
 Available in 8 mm Tape and Reel
 AEC Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir
Datasheet
14
NSVMMBD354LT1G

ON Semiconductor
Dual Hot Carrier Mixer Diodes

• Very Low Capacitance − Less Than 1.0 pF @ Zero V
• Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These
Datasheet
15
MMBT3906

ON Semiconductor
PNP General-Purpose Amplifier
Datasheet
16
MMBR930L

Motorola Semiconductor
NPN Silicon High Frequency Transistor
Datasheet
17
MMBZ5249B

Fairchild Semiconductor
Zener Diodes
Datasheet
18
MMBT2222A

Taiwan Semiconductor
NPN Transistor

● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 APPLICATIONS
● Switching mode p
Datasheet
19
MMBF170L

ON Semiconductor
N-Channel MOSFET

• NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Sourc
Datasheet
20
MMBT4401

ON Semiconductor
NPN Amplifier
ot recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parame
Datasheet



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