MMBD101LT1G ON Semiconductor Schottky Barrier Diodes Datasheet, en stock, prix

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MMBD101LT1G

ON Semiconductor
MMBD101LT1G
MMBD101LT1G MMBD101LT1G
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Part Number MMBD101LT1G
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description Schottky Barrier Diodes MBD101G, MMBD101LT1G Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic ...
Features
 Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
 Very Low Capacitance − Less Than 1.0 pF
 High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR Forward Power Dissipation PF TA = 25C MBD101 MMBD101LT1 7.0 V 280 mW 225 Derate above 25C MBD101 MMBD101LT1 2.2 mW/C 1.8 Junction Temperature TJ +150 C Storage Temperature Range Tstg −55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceed...

Document Datasheet MMBD101LT1G Data Sheet
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