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ON Semiconductor |
P-Channel MOSFET • −2 A, −20 V ♦ RDS(ON) = 0.08 W @ VGS = −4.5 V ♦ RDS(ON) = 0.13 W @ VGS = −2.5 V • Rugged gate rating (±12 V). • High Performance Trench Technology for Extremely Low RDS(ON) • Enhanced power SUPERSOTt−3 (SOT−23) DATA SHEET www.onsemi.com D S G SOT− |
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ON Semiconductor |
N-Channel MOSFET • 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V • Low Gate Charge (4.5 nC typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • This Device is Pb− |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg This product is optimised for fast switching ap |
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Fairchild Semiconductor |
P-Channel MOSFET • –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V RDS(ON) = 0.080 Ω @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability th |
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Fairchild Semiconductor |
single P-Channel MOSFET • –2A,20 V RDS(ON)=70 mΩ @ VGS = –4.5 V RDS(ON)=110 mΩ @ VGS = –2.5 V • Low gate charge (7.2 nC typical). • Highperformance trenchtechnology for extremely low RDS(ON). • Highpower versionofindustryStandardSOT-23 package. Identical pin-out to SOT-2 |
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Fairchild Semiconductor |
N-Channel MOSFET 1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for e |
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Fairchild Semiconductor |
P-Channel MOSFET -1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exc |
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Fairchild Semiconductor |
P-Channel MOSFET • –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • ESD protection diode • High performance tre |
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Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET • 2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V • Very fast switching speed. • Low gate charge (5nC typical) • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher p |
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ON Semiconductor |
N-Channel MOSFET • 2.2 A, 30 V ♦ RDS(on) = 0.065 W @ VGS = 4.5 V ♦ RDS(on) = 0.082 W @ VGS = 2.5 V • Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical Capabilities • High Density Cell Design |
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ON Semiconductor |
P-Channel MOSFET • −2.4 A, −20 V ♦ RDS(ON) = 52 mW @ VGS = −4.5 V ♦ RDS(ON) = 70 mW @ VGS = −2.5 V ♦ RDS(ON) = 100 mW @ VGS = −1.8 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−23 provides Low RDS(ON) and 30% High |
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ON Semiconductor |
P-Channel MOSFET • −2 A, −30 V ♦ RDS(ON) = 80 mW @ VGS = −10 V ♦ RDS(ON) = 125 mW @ VGS = −4.5 V • Low Gate Charge (6.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power Version of Industry Standard SOT−23 Package. Identical Pin− |
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ON Semiconductor |
P-Channel MOSFET −1.25 A, −60 V RDS(on) = 0.170 W @ VGS = −10 V RDS(on) = 0.230 W @ VGS = −4.5 V Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(on) This Device is Pb−Free and Halogen Free Applications DC−DC Converters Lo |
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ON Semiconductor |
N-Channel MOSFET • Shielded Gate MOSFET Technology • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Wide |
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ON Semiconductor |
P-Channel MOSFET • −1.5 A, −30 V ♦ RDS(ON) = 125 mW @ VGS = −10 V ♦ RDS(ON) = 200 mW @ VGS = −4.5 V • Low Gate Charge (4 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power Version of Industry Standard SOT−23 Package. Identical Pin |
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ON Semiconductor |
P-Channel MOSFET • –2.6 A, –12 V RDS(on) = 40 mW @ VGS = –4.5 V RDS(on) = 50 mW @ VGS = –2.5 V RDS(on) = 80 mW @ VGS = –1.8 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−3 Provides Low RDS(on) and 30% Higher Power |
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ON Semiconductor |
P-Channel MOSFET • −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than S |
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ON Semiconductor |
P-Channel MOSFET • −2 A, 20 V ♦ RDS(ON) = 70 mW @ VGS = −4.5 V ♦ RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power Version of Industry Standard SOT−23 Package. Identical Pin− |
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Fairchild Semiconductor |
P-Channel MOSFET • –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% high |
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Fairchild Semiconductor |
P-Channel MOSFET • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • High performance trench technology for extre |
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