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FDN357N |
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| Part Number | FDN357N |
| Manufacturer | Fairchild Semiconductor |
| Description | SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is esp... |
| Features |
1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
7 35
S
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage
TA = 25oC unless other wise noted FDN357N 30 ±20 1.9 10
(Note 1a) (Not... |
| Document |
 FDN357N Data Sheet
PDF 84.64KB |
| Distributor | Stock | Price | Buy |
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