No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
|
|
|
ON Semiconductor |
Low-Capacitance ESD Protection • Two, Four, and Eight Channels of ESD Protection • Provides ESD Protection to IEC61000−4−2 Level 4 ±8 kV Contact Discharge & ±15 kV Air Discharge • Low Loading Capacitance of 0.8 pF Typical • Minimal Capacitance Change with Temperature and Voltage • |
|
|
|
ON Semiconductor |
4-Channel LCD EMI Filter Array and ESD Protection Array • Functionally and Pin−Compatible with CSPEMI607 Device • Four Channels of Combined EMI/RFI Filtering + ESD Protection • Four Additional Channels of ESD−Only Protection • Better Than 30 dB Attenuation (Typical) at 1 GHz • ±15 kV ESD Protection on All |
|
|
|
ON Semiconductor |
Low Capacitance ESD Arrays • One, two, and four channels of ESD Protection • Provides ±15 kV ESD Protection on Each Channel Per the IEC 61000−4−2 ESD Requirements • Channel Loading Capacitance of 1.6 pF Typical • Channel I/O to GND Capacitance Difference of 0.04 pF Typical • M |
|
|
|
ON Semiconductor |
EMI Filter • Four, Six and Eight Channels of EMI Filtering with ESD Protection • Greater than 30 dB of Attenuation from 800 MHz to 3 GHz • ±15 kV ESD Protection (IEC 61000−4−2, Contact Discharge) • ±30 kV ESD Protection (HBM) • Fabricated with Centuriont Advanc |
|
|
|
Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
|
|
|
Mitsubishi Electric Semiconductor |
IGBT Module so — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = |
|
|
|
Powerex Power Semiconductors |
IGBT Module □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module n |
|
|
|
Powerex Power Semiconductors |
IGBT Module = 25°C) Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isola |
|
|
|
Dynex Semiconductor |
Igbt Chopper Module s s s s 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 600A 1200A *(measured at the power busbars |
|
|
|
ON Semiconductor |
2- and 4-Channel Low Capacitance ESD Protection Arrays • One, Two, and Four Channels of ESD Protection Note: For 6 and 8−channel Devices, See the CM1213 Datasheet • Provides ESD Protection to IEC61000−4−2 Level 4 ♦ ±12 kV Contact Discharge • Low Channel Input Capacitance of 0.85 pF Typical • Minimal Capa |
|
|
|
ON Semiconductor |
4-Channel Low Capacitance ESD Protection Arrays • • • • • • • • Four channels of ESD protection Provides ESD protection to IEC61000-4-2 Level 4 • ±8kV contact discharge Low channel input capacitance of 0.8pF (typically) Channel input capacitance matching (I/O to I/O) of 0.02pF (typically) is ideal |
|
|
|
ON Semiconductor |
2-and 4-Channel Low Capacitance ESD Protection Arrays • • • • • • • • Two and four channels of ESD protection Provides ESD protection to IEC61000-4-2 • ±8kV contact discharge Low loading capacitance of 2.0pF max. Low clamping voltage Channel I/O to I/O capacitance 1.5pF typical Zener diode protects supp |
|
|
|
ON Semiconductor |
6 Channel EMI Filter Array http://onsemi.com WLCSP15 CP SUFFIX CASE 567BS MARKING DIAGRAM N003 MG G N003 = CM1400−03CP M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device CM1400−03CP Package CSP−15 (Pb−Free) Shipping† 35 |
|
|
|
Toshiba Semiconductor |
CMOS 8-Bit Microcontroller ions were left unchanged in body text. The new ones are indicated on the prelims pages. 3. Addition of notes on lead solderability Now that the device is Pb-free, notes on lead solderability have been added. 4. RESTRICTIONS ON PRODUCT USE The previou |
|
|
|
ON Semiconductor |
Low-Capacitance ESD Protection Array easily routed “pass−through” differential pinouts in a 6−lead SOT23 package. Features • Two Channels of ESD Protection • Exceeds ESD Protection to IEC61000−4−2 Level 4: • ±12 kV Contact Discharge (OUT Pins) • Two−Stage Matched Clamp Architecture • Ma |
|
|
|
ON Semiconductor |
L-C EMI Filter • Two Channels of EMI Filtering • ±30 kV ESD Protection (IEC 61000−4−2, Contact Discharge) • ±30 kV ESD Protection (HBM) • OptiGuardt Coating for Improved Reliability at Assembly • Greater than 35 dB of Attenuation at 1 GHz • 6−Bump, 1.720 mm X 1.220 |
|
|
|
ON Semiconductor |
C-L-C LCD and Camera EMI Filter • Four, Six and Eight Channels of EMI Filtering with Integrated ESD Protection • Pi−Style EMI Filters in a Capacitor−Inductor−Capacitor (C−L−C) Network • ±15 kV ESD Protection on Each Channel (IEC 61000−4−2 Level 4, Contact Discharge) • ±30 kV ESD Pr |
|
|
|
ON Semiconductor |
4-Channel ESD/EMI Filter Array Plus 4-Channel ESD Array • Functionally and Pin−Compatible with CSPEMI307A Device • OptiGuardt Coated for Improved Reliability at Assembly • Four Channels of Combined EMI/RFI Filtering + ESD Protection • Four Additional Channels of ESD−Only Protection • 40 dB Absolute Attenu |
|
|
|
ON Semiconductor |
ESD Clamp easily routed “pass−through” pinouts in a RoHS compliant (lead−free), 16−lead WDFN, small footprint package. Features • ESD Protection for 4 Pairs of Differential Channels • ESD Protection to: • IEC61000−4−2 Level 4 (ESD) at ±8 kV Contact Discharge • |
|