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ON Semiconductor |
NPN Silicon Transistor • High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating |
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ON Semiconductor |
PNP Silicon Transistor • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Siemens Semiconductor Group |
NPN SILICON EPIBASE TRANSISTORS |
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Siemens Semiconductor Group |
PNP SILICON EPIBASE TRANSISTORS |
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ON Semiconductor |
PNP Silicon Transistor • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and |
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ON Semiconductor |
NPN Silicon Transistor • High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating |
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Siemens Semiconductor Group |
Silicon Switching Diode Array apacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2.5 15 pF ns V(BR) VF 550 850 IR – – – – 700 1100 100 nA 70 – – V mV Values typ. max. Un |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ |
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Central Semiconductor |
SILICON PNP TRANSISTOR B=5.0V BVCEO IC=50mA (BD676) 45 BVCEO IC=50mA (BD678) 60 BVCEO IC=50mA (BD680) 80 BVCEO IC=50mA (BD682) 100 BVCEO IC=50mA (BD684) 120 VCE(SAT) IC=1.5A, IB=6.0mA (BD676: IC=2.0A) VBE(ON) VCE=3.0V, IC=1.5A (BD676: IC=2.0A) hFE VCE=3 |
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ON Semiconductor |
PNP Silicon Transistor • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor BD675A/677A/679A : BD681 Test Condition IC = 50mA, IB = 0 Min. 45 60 80 100 200 200 200 200 500 500 500 500 2 750 750 2.8 2.5 2.5 2.5 V V V V Typ. Max. Units V V V V µA µA µA µA µA µA µA µA mA ICBO VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE |
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ON Semiconductor |
PNP Silicon Transistor • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and |
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ON Semiconductor |
Monolithic Dual Switching Diode • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR IF IFM(surge) 70 200 500 Vdc |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor tion to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD644 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. |
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Comset Semiconductors |
Power Transistor BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataShe |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS ed Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) Ratings Collector cut-off current Test Condition(s) Min 750 10 -0,8 - Typ 60 -1,5 0,8 4,5 Max -0,2 -2 -0,5 -5 -2,5 Unit mA mA mA V IE=0, VCB= -120 V IE=0, VCB= -120V, Tj= 150°C Colle |
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ON Semiconductor |
PNP Transistor • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and |
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Central Semiconductor |
NPN SILICON POWER DARLINGTON TRANSISTOR IC=50mA (BD679, BD679A) 80 BVCEO IC=50mA (BD681) 100 BVCEO IC=50mA (BD683) 120 VCE(SAT) IC=1.5A, IB=30mA (Non-A) VCE(SAT) IC=2.0A, IB=40mA (A) VBE(ON) VCE=3.0V, IC=1.5A (Non-A) VBE(ON) VCE=3.0V, IC=2.0A (A) hFE VCE=3.0V, IC=1.5A (Non- |
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