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BD647 |
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| Part Number | BD647 |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended... |
| Features |
651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
Unit
IB
Base Current
300
mA
PT
Power Dissipation
@ Tmb < 25°
62.5
Watts
TJ
Junction Temperature
150 °C -65 to +150
www.DataSheet.net/
Ts
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
RthJ-MB RthJ-A
Ratings
From junction to mounting base From junction to ambient in free air
Value
2 62.5
Unit
K/W K/W
17/10/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMIC... |
| Document |
 BD647 Data Sheet
PDF 164.26KB |
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