| No. | Partie # | Fabricant | Description | Fiche Technique |
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Comset Semiconductors |
Silicon NPN Power Transistors CTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(* |
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Fairchild Semiconductor |
Small Signal Diode |
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Fairchild Semiconductor |
Medium Power Linear and Switching Applications = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE = 5V, IC = 10mA VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 3 0.58 |
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Fairchild Semiconductor |
Small Signal Diode |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor 434 : BD436 : BD438 ICEO Collector Cut-off Current : BD434 : BD436 : BD438 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) * Collector-Emitter Saturation Voltage : BD434 : BD436 : BD438 |
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ON Semiconductor |
PNP Transistor • Pb−Free Packages are Available* http://onsemi.com 4.0 AMP POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit Collector−Emitter Voltage BD436 BD438 BD440 BD442 VCEO 32 45 60 80 Vdc |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes Top View .056 (1.43) .052 (1.33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. including: the DO-35 case with the type designation 1N4148, the Mini-MELF case with the type design |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes Top View .056 (1.43) .052 (1.33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. ♦ This diode is also available in other case styles including: the DO-35 case with the type designa |
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Inchange Semiconductor |
Silicon NPN Power Transistors IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V ICBO Collector Cutoff Current VCB= 22V; IE= 0 ICEO Collector Cutoff Current VCE= 22V; VBE= 0 IEBO Emitter Cutof |
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ON Semiconductor |
Plastic Medium Power Silicon NPN Transistor http://onsemi.com • Pb−Free Package is Available* 4.0 AMPERES POWER TRANSISTORS NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ |
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Taiwan Semiconductor |
SMD Switching Diode - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on da |
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ON Semiconductor |
Plastic Medium-Power Silicon NPN Transistors • Complementary Types are BD438 and BD442 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD435G BD437G BD439G BD441G VCEO 32 45 60 80 Vdc Collector−Base Voltage BD435G |
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Siemens Semiconductor Group |
PNP TRANSISTORS |
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Siemens Semiconductor Group |
PNP TRANSISTORS |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor EO Collector Cut-off Current : BD433 : BD435 : BD437 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 VCE(sat) * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Vol |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor EO Collector Cut-off Current : BD433 : BD435 : BD437 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 VCE(sat) * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Vol |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor 434 : BD436 : BD438 ICEO Collector Cut-off Current : BD434 : BD436 : BD438 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) * Collector-Emitter Saturation Voltage : BD434 : BD436 : BD438 |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor st Condition IC = - 100mA, IB = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 10mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A IC = - 2A, IB = - 0.2A VCE = - 5V, IC = - 10 |
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Siemens Semiconductor Group |
PNP TRANSISTORS |
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