BD433 |
Part Number | BD433 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 22V(Min) ·Complement to type BD434 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for m... |
Features |
IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICBO
Collector Cutoff Current
VCB= 22V; IE= 0
ICEO
Collector Cutoff Current
VCE= 22V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 1V
hFE-3
DC Current Gain
IC= 2A; VCE= 1V
fT
Current-Gain—Bandwidth Product IC= 0.25A; VCE= 1V
BD433
MIN TYP. MAX UNIT
22
V
0.5
V
1.1
V
100 μA
100 μA
1
mA
40
85
50
3
MHz
NOTICE: ISC reserves the rights to make changes o... |
Document |
BD433 Data Sheet
PDF 187.49KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD430 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR | |
2 | BD433 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
3 | BD433 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | BD433 |
TRANSYS Electronics |
EPITAXIAL SILICON POWER TRANSISTORS | |
5 | BD433 |
Comset Semiconductors |
Silicon NPN Power Transistors |