| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C GC E |
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Fairchild Semiconductor |
40A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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Fairchild Semiconductor |
FGA40N60UFD • • • • High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO- |
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Fairchild Semiconductor |
Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS R |
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ON Semiconductor |
Power MOSFET • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Fr |
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ON Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A • High Input Impedance • Fast Switching: EOFF = 6.5 mJ/ |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swit |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc |
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Fairchild Semiconductor |
Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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Fairchild Semiconductor |
FQA40N25 • 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge ( Typ. 85nC) • Low Crss ( Typ. 70pF) • 100% Avalanche Tested D G G D S TO-3PN S Absolute Maximum Ratings T + 6 6 + < 6 < !$ 8 |
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American First Semiconductor |
3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax |
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ON Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applic |
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ON Semiconductor |
N-Channel MOSFET • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemptio |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swit |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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Naina Semiconductor |
Phase Control Thyristors • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Electrical Ratings (TJ = 250C, unless otherwise noted) Parame |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit |
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National Semiconductor |
90-Key Keyboard Encoder |
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