| No. | Partie # | Fabricant | Description | Fiche Technique |
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InPower Semiconductor |
N-Channel MOSFET 0pF,R=1.5K: 6000 V TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 *Drain Current limited |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar application |
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ON Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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Naina Semiconductor |
Phase Control Thyristors • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance TO-208AA (TO-48) Voltage Ratings (TJ = 25oC, unless otherwise |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers isc Product Spec |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD025N10HS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ I D 32 A TO-25 |
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Fairchild Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.21Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMU |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMU |
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Fairchild Semiconductor |
Field Stop Trench IGBT • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microvewave Oven General Description Using advanced field stop tre |
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ON Semiconductor |
Power MOSFET • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • |
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Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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ON Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 Ω (Typ.) SSH25N40A BVDSS = 400 V RDS(on) = 0.2 |
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Taiwan Semiconductor Company |
25V N-Channel MOSFET Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM25N03CP RO Package TO-252 Packing 2.5Kpcs |
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ON Semiconductor |
N-Channel Power MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 105 mW • Ultra Low Gate Charge (Typ. Qg = 46 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / S |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halo |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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ON Semiconductor |
Automotive N-Channel MOSFET • AEC−Q101 Qualified • Max Junction Temperature 150°C • Typ. RDS(on) = 19.9 mΩ • Ultra Low Gate Charge (Typ. QG = 236 nC) • Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF) • 100% Avalanche Tested Typical Applications • Automotive PHEV−BE |
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