25N60 |
Part Number | 25N60 |
Manufacturer | Inchange Semiconductor |
Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resis... |
Features |
·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.21Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±30 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.cn ... |
Document |
25N60 Data Sheet
PDF 59.25KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 25N60N |
Fairchild Semiconductor |
FCH25N60N | |
2 | 25N60N |
ON Semiconductor |
N-Channel MOSFET | |
3 | 25N621K |
HUAAN |
Metal Oxide Varistor | |
4 | 25N681K |
HUAAN |
Metal Oxide Varistor | |
5 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |