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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with hi |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test Pb-free lead plating; RoHS compliant VS1401ATH 100V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 100 V 4.5 mΩ 200 A TO-220AB Part ID V |
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Hitachi Semiconductor |
Dual D-type Flip Flop rty rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document |
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Elantec Semiconductor |
Fast Buffer Amplifier Slew rate 1500 V ms Output drive 100 mA Rise and fall times 2 9 ns Input resistance 1011X Power bandwidth 100 MHz MIL-STD-883 devices 100% manufactured in U S A General Description The ELH0033 is a high-speed FET input voltage follower b |
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Hitachi Semiconductor |
Dual Complementary Pair plus Inverter product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, tra |
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National Semiconductor |
3-Terminal Positive Regulators Y Y Y Y Y Y Y Y Line regulation of 0 04% V Load regulation of 0 01% mA Output voltage tolerances of g 2% at Tj e 25 C and g 4% over the temperature range (LM140LA) g 3% over the temperature range (LM340LA) Output current of 100 mA Internal thermal |
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ON Semiconductor |
Dual Type D Flip-Flop • Static Operation • Diode Protection on All Inputs • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Logic Edge−Clocked Flip−Flop Design • Logic State is Retained Indefinitely with Clock Level either High or Low; Information is Transferred to the Output |
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National Semiconductor |
Precision 2.50V Reference Y Y Y Y Y Y Y Y Y Low cost Low 400 mA operating current Low output impedance (0 15X) Excellent line regulation (0 0001% V typical) Single-supply operation Low temperature coefficient Excellent initial accuracy (0 05% typical) Excellent for low-volt |
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ON Semiconductor |
Plastic Medium Power Silicon PNP Transistor ector 3 Base MARKING DIAGRAM YWW BD1XX Y WW BD1XX XX = Year = Work Week = Specific Device Code = 36, 38, 40 ORDERING INFORMATION Device BD13610STU BD13610S BD13616STU BD13616S BD13810STU BD13816STU BD14010STU BD14016STU BD14016S Package Shipp |
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Catalyst Semiconductor |
(CAT140xx) Voltage Supervisor Precision Power Supply Voltage Monitor 5V, 3.3V, 3V & 2.5V systems 7 threshold voltage options Active High or Low Reset Valid reset guaranteed at VCC = 1 V Supports Standard and Fast I2C Protocol 16-Byte Page Write Buffer Low power CM |
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ON Semiconductor |
Quad 2-Input NAND Schmitt Trigger • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over the Rated Temperature Range • Triple Diode Protection on All Inputs • Pin−for−Pin Compatible with CD4093 • Can be Used to |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13610S BD13610STU BD13616S BD13616STU BD13810STU BD13816STU BD14010STU BD |
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ON Semiconductor |
Phase-Frequency Detector http://onsemi.com MARKING DIAGRAM 8 8 1 SOIC−8 D SUFFIX CASE 751 1 x A L Y W G x140 ALYW G = H or K = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package 800 MHz Typical Bandwidth Small Outline 8-Lead SOIC Package 75 kW Internal Inp |
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NXP Semiconductors |
(BC140 / BC141) NPN medium power transistors • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 3 BC140; BC141 PINNING PIN 1 2 3 emi |
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Comset Semiconductors |
NPN SILICON POWER DARLINGTONS TRANSISTORS 5°C unless otherwise noted Symbol ICEO Ratings Collector Cutoff Current IB= 0 Emitter Cutoff Current IC= 0 Collector Cutoff Current IE= 0 Collector-Emitter Sustaining IB= 0 Test Condition(s) Min 60 80 100 1000 500 Typ - Max 2 Unit mA VCE= 30 |
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Alpha & Omega Semiconductors |
POWER Transistor VDS (V) = 25V ID = 43A RDS(ON) <7mΩ RDS(ON) <14mΩ (V GS = 10V) (V GS = 10V) (V GS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symb |
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ON Semiconductor |
Plastic Medium-Power Silicon PNP Transistors • High DC Current Gain • BD 136, 138, 140 are complementary with BD 135, 137, 139 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD136G BD138G BD140G |
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Hitachi Semiconductor |
Quadruple 2-input NAND Gate rty rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document |
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Peregrine Semiconductor |
Monolithic Phase & Amplitude Controller • 90° phase splitter • 4-bit digital step attenuator, 7.5 dB range, 0.5 dB resolution • 5-bit digital phase shifter, 87.2° range, 2.8° resolution • High power handling and linearity ▪ P0.1dB of +35 dBm ▪ Input IP3 of +60 dBm • 3-bit insertion loss st |
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