NCE82H140 |
Part Number | NCE82H140 |
Manufacturer | NCE Power Semiconductor |
Description | The NCE82H140 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =140A RDS... |
Features |
● VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device P... |
Document |
NCE82H140 Data Sheet
PDF 370.84KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | NCE82H140D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE82H110 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE82H110D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE8205 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
5 | NCE8205 |
JCST |
N-Channel MOSFETS |