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Pan Jit International |
NPN GENERAL PURPOSE SWITCHING TRANSISTOR • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1 |
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ON Semiconductor |
Zener Voltage Regulators • 225 mW Rating on FR−4 or FR−5 Board • Zener Voltage Range − 2.4 V to 91 V • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications • ESD Rating of Class 3 (>16 kV) per Human Body Model • Peak Power |
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ON |
General Purpose Transistor • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.com COL |
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ON Semiconductor |
Silicon Hot-Carrier Diodes • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) • Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V • Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor , MMBT5551 。 High voltage, complementary Pair with MMBT5551. / Applications 。 General purpose high voltage amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN 1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE |
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GME |
NPN Silicon Epitaxial Planar Transistor Epitaxial planar die construction. Complementary PNP type available: Pb Lead-free MMBT4403. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS General purpose application, switching application. MMBT4401 SOT-23 OR |
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ON Semiconductor |
Dual Switching Diode • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (EA |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ：1，ESD ： 4kV, 400V。 Moisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. / Applications IC 500mA 。 Medium power amplifier and switch requiring collector currents up to 500 mA. / Equivalent Circuit / Pinni |
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ON Semiconductor |
PNP Silicon Transistors • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Val |
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ON Semiconductor |
Switching Transistor • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − |
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SEMTECH |
PNP Silicon General Purpose Transistor ollector Emitter Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Collector Cutoff Current at -VCB = 35 V Base Cutoff Current at |
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Hitachi Semiconductor |
PTM(Programmble Timer Module) |
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Fairchild Semiconductor |
Small Signal Diode |
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ON Semiconductor |
Schottky Barrier Diodes Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Available in 8 mm Tape and Reel AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir |
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ON Semiconductor |
Schottky Barrier Diodes Low Noise Figure − 6.0 dB Typ @ 1.0 GHz Very Low Capacitance − Less Than 1.0 pF High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltag |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor , MMBT5551T 。 High voltage, complementary Pair with MMBT5551T. / Applications 。 General purpose high voltage amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Mar |
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ON |
SILICON SCHOTTKY BARRIER DIODES ECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Forward Voltage(1) (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) Symbol V(BR)R CT VF I |
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ON Semiconductor |
Zener Diode • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Standard Zener Breakdown Voltage Range − 5.6 V to 47 V • Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform • ES |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • |
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WEITRON |
General Purpose Transistor commended footprint. 2. Pulse Test:Pulse Width <= 300 µS, Duty Cycle <= 2.0%. V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc WEITRON http://www.weitron.com.tw MMBT3906W Electrical Characteri |
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