No. | Partie # | Fabricant | Description | Fiche Technique |
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Numonyx |
256-Mbit StrataFlash Embedded Memory Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous pag |
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Intel Corporation |
Numonyx Embedded Flash Memory ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read |
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Numonyx |
32-Mbit Single Bit per Cell Embedded Flash Memory Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word |
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Numonyx |
64-Mbit Single Bit per Cell Single Bit per Cell Datasheet High performance: Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata |
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Numonyx |
64-Mbit Single Bit per Cell P30-65nm Flash Memory High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
64-Mbit Single Bit per Cell Embedded Flash Memory Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word |
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Numonyx |
64-Mbit Single Bit per Cell Single Bit per Cell Datasheet High performance: Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata |
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Numonyx |
128-Mbit Single Bit per Cell Embedded Flash Memory Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word |
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Numonyx |
128-Mbit Single Bit per Cell Single Bit per Cell Datasheet High performance: Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata |
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Numonyx |
128-Mbit Single Bit per Cell Single Bit per Cell Datasheet High performance: Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata |
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Numonyx |
64-Mbit Single Bit per Cell P30-65nm Flash Memory High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and |
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Numonyx |
128-Mbit Single Bit per Cell P30-65nm Flash Memory High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and |
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Numonyx |
128-Mbit Single Bit per Cell P30-65nm Flash Memory High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and |
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Numonyx |
Embedded Memory High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming |
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Numonyx |
Embedded Memory High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming |
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Intel Corporation |
Numonyx Embedded Flash Memory ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read |
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Intel Corporation |
Numonyx Embedded Flash Memory ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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