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Numonyx JS2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
JS28F256J3F105

Numonyx
256-Mbit StrataFlash Embedded Memory
„ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes „ Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous pag
Datasheet
2
JS28F640J3D-75

Intel Corporation
Numonyx Embedded Flash Memory


■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read
Datasheet
3
JS28F320J3F75

Numonyx
32-Mbit Single Bit per Cell Embedded Flash Memory
„ Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block „ Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word
Datasheet
4
JS28F128P33BF70

Numonyx
64-Mbit Single Bit per Cell Single Bit per Cell
Datasheet „ High performance: „ Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata
Datasheet
5
JS28F640P30BF75

Numonyx
64-Mbit Single Bit per Cell P30-65nm Flash Memory
„ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and
Datasheet
6
JS28F00AM29EWHx

Numonyx
3 V supply flash memory
„ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
Datasheet
7
JS28F00AM29EWLx

Numonyx
3 V supply flash memory
„ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
Datasheet
8
JS28F640J3F75

Numonyx
64-Mbit Single Bit per Cell Embedded Flash Memory
„ Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block „ Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word
Datasheet
9
JS28F128P33TF70

Numonyx
64-Mbit Single Bit per Cell Single Bit per Cell
Datasheet „ High performance: „ Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata
Datasheet
10
JS28F128J3F75

Numonyx
128-Mbit Single Bit per Cell Embedded Flash Memory
„ Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block „ Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word
Datasheet
11
JS28F640P33BF70

Numonyx
128-Mbit Single Bit per Cell Single Bit per Cell
Datasheet „ High performance: „ Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata
Datasheet
12
JS28F640P33TF70

Numonyx
128-Mbit Single Bit per Cell Single Bit per Cell
Datasheet „ High performance: „ Security: — 60ns initial access time for Easy BGA — One-Time Programmable Registers: — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-todata
Datasheet
13
JS28F640P30TF75

Numonyx
64-Mbit Single Bit per Cell P30-65nm Flash Memory
„ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and
Datasheet
14
JS28F128P30BF75

Numonyx
128-Mbit Single Bit per Cell P30-65nm Flash Memory
„ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and
Datasheet
15
JS28F128P30TF75

Numonyx
128-Mbit Single Bit per Cell P30-65nm Flash Memory
„ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and
Datasheet
16
JS28F256P30B95

Numonyx
Embedded Memory
„ High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming
Datasheet
17
JS28F256P30T95

Numonyx
Embedded Memory
„ High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming
Datasheet
18
JS28F320J3D-75

Intel Corporation
Numonyx Embedded Flash Memory


■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read
Datasheet
19
JS28F128J3D-75

Intel Corporation
Numonyx Embedded Flash Memory


■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read
Datasheet
20
JS28F512M29EWHx

Numonyx
3 V supply flash memory
„ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
Datasheet



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