JS28F256J3F105 |
Part Number | JS28F256J3F105 |
Manufacturer | Numonyx |
Description | Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 12... |
Features |
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— 256 symmetrically-sized blocks of 128 Kbytes
Performance
— 95 ns initial access time for Easy BGA
— 105 ns initial accsss time for TSOP
— 25 ns 16-word Asynchronous page-mode reads
— 512-Word Buffer Programming at 1.46MByte/s (Typ)
Voltage and Power
— VCC (Core) = 2.7 V to 3.6 V — VCCQ (I/O) = 2.7 V to 3.6 V — Standby Current: 65 µA (Typ)
— Erase & Program Current: 35 mA (Typ)
— Page Read: 12 mA (Typ)
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block — 65 ... |
Document |
JS28F256J3F105 Data Sheet
PDF 639.00KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | JS28F256J3A |
Intel Corporation |
Intel StrataFlash Memory | |
2 | JS28F256J3C |
Intel |
StrataFlash Memory | |
3 | JS28F256M29EW |
MICRON |
Parallel NOR Flash Embedded Memory | |
4 | JS28F256M29EWHx |
Numonyx |
3 V supply flash memory | |
5 | JS28F256M29EWLx |
Numonyx |
3 V supply flash memory |