| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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NXP Semiconductors |
PNP 800 mA I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tol |
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NXP Semiconductors |
PNP 800 mA I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tol |
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NXP Semiconductors |
NPN 800 mA 40 V BISS RETs I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleranc |
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|
NXP Semiconductors |
NPN 800 mA 40 V BISS RETs I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio toleranc |
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