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NXP |
Low VF (MEGA) Schottky barrier diode • Low switching losses • Very high surge current absorption capability • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. handbook, halfpage |
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NXP |
2A low leakage current Schottky barrier rectifier and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 100 V • Low forward voltage: VF = 710 mV • High power capability due to clip-bonding technology • Extremely low leakage current • High temperature Tj ≤ 175 °C • Small and fl |
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NXP Semiconductors |
40V 1A low VF MEGA Schottky barrier rectifier and benefits Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 40 V Low forward voltage VF ≤ 600 mV Low reverse current AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm Ultra small and leadless SMD plastic |
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NXP |
very low VF MEGA Schottky barrier dual rectifier Forward current: ≤ 0.2 A Reverse voltage: ≤ 30 V Very low forward voltage Ultra small and flat lead SMD plastic package 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse p |
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NXP Semiconductors |
0.2A very low VF MEGA Schottky barrier rectifier s s s s s Forward current: 0.2 A Reverse voltage: 30 V Very low forward voltage Leadless ultra small plastic package Power dissipation comparable to SOT23. 1.3 Applications s s s s s s Ultra high-speed switching Voltage clamping Protection circuits |
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NXP |
200 MA Low Vf MEGA Schottky Barrier Rectifier I I I I I Average forward current: IF(AV) ≤ 0.2 A Reverse voltage: VR ≤ 30 V Low forward voltage AEC-Q101 qualified Small and flat lead SMD plastic package 1.3 Applications I I I I I I Low voltage rectification High efficiency DC-to-DC conversion Switch |
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NXP Semiconductors |
Low VF MEGA Schottky barrier diode • Forward current: 1 A • Reverse voltage: 20 V • Very low forward voltage • Ultra small SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Swit |
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NXP Semiconductors |
0.2A low VF MEGA Schottky barrier rectifier and benefits Forward current: IF ≤ 0.2 A Reverse voltage: VR ≤ 30 V Low forward voltage: VF ≤ 480 mV Ultra small and leadless SMD plastic package AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm 1.3 Applications |
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NXP Semiconductors |
0.2A low VF MEGA Schottky barrier rectifier and benefits Forward current: IF 0.2 A Reverse voltage: VR 40 V Low forward voltage: VF 600 mV Ultra small and leadless SMD plastic package AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm 1.3 Applications |
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NXP Semiconductors |
low VF MEGA Schottky barrier rectifier and benefits Average forward current: IF(AV) ≤ 0.5 A Reverse voltage: VR ≤ 20 V Low forward voltage VF ≤ 410 mV Low reverse current AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm Ultra small and leadless SMD plas |
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NXP |
10A low VF MEGA Schottky barrier rectifier and benefits • Average forward current: IF(AV) ≤ 10 A • Reverse voltage: VR ≤ 45 V • Extremely low forward voltage • High power capability due to clip-bonding technology and heat sink • Small and thin SMD power plastic package, typical height 0.78 mm |
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NXP |
MEGA Schottky barrier rectifier and benefits • Average forward current IF(AV) ≤ 0.2 A • Reverse voltage VR ≤ 30 V • Low forward voltage typ. VF = 250 mV • Low reverse current typ. IR = 4 µA • Package height typ. 0.3 mm 3. Applications • Low voltage rectification • High efficiency |
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NXP |
MEGA Schottky barrier rectifier and benefits • Average forward current IF(AV) ≤ 0.2 A • Reverse voltage VR ≤ 30 V • Low forward voltage typ. VF = 310 mV • Low reverse current typ. IR = 0.33 µA • Package height typ. 0.3mm 3. Applications • Low voltage rectification • High efficienc |
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NXP |
10A extremely low VF MEGA Schottky barrier rectifier and benefits • • • • • Average forward current: IF(AV) ≤ 10 A Reverse voltage: VR ≤ 45 V Extremely low forward voltage High power capability due to clip-bonding technology and heat sink Small and thin SMD power plastic package, typical height 0.78 mm |
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NXP |
MEGA Schottky barrier rectifiers I Forward current: IF ≤ 1 A I Reverse voltage: VR ≤ 20 V I Very low forward voltage I Small SMD plastic packages 1.3 Applications I Low voltage rectification I High efficiency DC-to-DC conversion I Switch mode power supply I Reverse polarity protectio |
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NXP |
NPN transistor/Schottky-diode module • 600 mW total power dissipation • High current capability • Reduces required PCB area • Reduced pick and place costs • Small plastic SMD package. Transistor: • Low collector-emitter saturation voltage. Diode: • Ultra high-speed switching • Very low |
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NXP Semiconductors |
0.5 A very low VF MEGA Schottky barrier rectifiers Forward current: 0.5 A Very low forward voltage Flat lead SMD package 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applicati |
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NXP Semiconductors |
1A very low VF MEGA Schottky barrier rectifiers s Forward current: ≤ 1 A s Very low forward voltage 1.3 Applications s Low voltage rectification s High efficiency DC-to-DC conversion s Inverse polarity protection s Low power consumption applications 1.4 Quick reference data Table 2: IF VR Quick re |
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NXP Semiconductors |
(PMEGx005AEV) Very low VF MEGA Schottky barrier rectifiers • Very low forward voltage • High surge current • Ultra small plastic SMD package. APPLICATIONS www.DataSheet4U.com PMEG2005AEV; PMEG3005AEV; PMEG4005AEV QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2005AEV PMEG300 |
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NXP |
2A Low Vf MEGA Schottky Barrier Rectifier I I I I I I Average forward current: IF(AV) ≤ 2 A Reverse voltage: VR ≤ 30 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package 1.3 Applications I I I I I Low voltage rectifi |
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