| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
Advanced IGBT/SiC gate driver and benefits This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features • SPI interface for safety monitoring, programmability and flexibility • Low propagation delay and minimal PWM distortion • Integrated |
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NXP |
Three phase field effect transistor pre-driver • Extended supply voltage operating range: 6.0 V to 60 V • Wide dead time range (50 ns to 12 μs) programmable via the SPI port • Gate drive capability of 1.0 A to 2.5 A • Charge pump ensures sufficient exter |
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NXP |
Three phase field effect transistor predriver and benefits • Extended supply voltage operating range: 6.0 V to 60 V • Gate drive capability of 1.0 A to 2.5 A • Device protection against reverse charge-injection from CGD and CGS of external FETs • Includes a charge pump to support full FET drive |
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NXP |
Advanced IGBT/SiC gate driver and benefits This section summarizes the key features, safety features, and regulatory approvals for the GD3160. 2.1 Key features • Integrated Galvanic signal isolation (up to 8 kV) • High gate current integrated: 15 A source/sink capable • SPI inter |
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NXP |
Three phase field effect transistor predriver and benefits • Extended operating range from 6.0 V to 60 V covers 12 V and 48 V systems • Gate drive capability of 1.0 A to 2.5 A • Fully specified from 8.0 V to 40 V, covers 12 and 24 V automotive systems • Device protection against reverse charge-i |
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NXP |
Advanced IGBT/SiC gate driver such as overtemperature, desaturation, and current sense protection. GD3162 with integrated boost capability, can drive most SiC MOSFET and IGBT/SiC module gates directly and is able to shape the gate drive capability in order to improve the power d |
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